Thin Film Deposition
Thin Films Deposition and Characterization Laboratory
Responsible: Reinhard Schwarz
Contact
Reinhard Schwarz
ext.: 3952
e-mail: rschwarz@fisica.ist.utl.pt
Rachid Ayouchi
ext.: 3775
Access Conditions
Contact the responsible
Location
Instituto Superior Técnico, Avenida Rovisco Pais 1, 1049-001 Lisboa, Physic Building, floors 3 and 5
Applications
Deposition and opto-electronic characterization of semiconducting, insulating, and ferroelectric thin films
Hybrid PLD/CVD reactorEquipmentUHV reactor chamber and a pulsed Nd:YAG laser system Sources: Solid (e.g. Si, Zn, Cu) and gaseous (O, N) Laser wavelengths operation: 1064 nm, 532 nm and 266 nm Pulse energy: maximum 300 mJ Pulse duration: 5 ns CVD process powered by a 100 W RF-generator at 13.56 MHz PC-control of process parameters allows for simultaneous or sequential process protocols Reactor system with fast gas switching for attaining sharp interfaces Separate vacuum chambers are available for either semiconductor-oxide material system deposition or ferroelectric film preparation |
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Nitrogen Cryostat (low temperature equipment)EquipmentTemperature range: 80k to 500k Steady-state excitation by HeNe (633 nm), HeCd lasers (325 nm), and Xe light sources, together with various spectrometers Pulsed laser excitation by Nd:YAG laser ApplicationTransport and photoluminescence measurements |
Microwave reflectometer
Equipment
Microwave resonator system operate at 2.45 GHz
Application
Measurement of carrier mobility and recombination lifetime
INESC
Responsible: João Pedro Conde
Contact
Tel.:: 213 100 237
Fax: 213 145 843
e-mail: geral@inesc-mn.pt
Access Conditions
Restricted access. Contact the responsible
Ion beam deposition and milling system (1)
Nordiko 3600
Equipment
Base pressure: 5x10-8 Torr
6 targets to deposit multilayer structures with precise and automatic control of film thickness
Broad beam ion mill system to define structures through a photoresist or hard mask
Applications
Ion beam deposition of metals and dielectrics on wafers with 200mm diameter
Structures: spin valves and tunnel junctions by oxygen plasma, read gap oxides and passivation layers
Location
Rua Alves Redol, Nº9, Clean Room Class 100
Ion beam deposition and milling system (2)
Nordiko 3000
Equipment
Base pressure: 5x10-8 Torr
7 targets: Ni80Fe20, Mn80Ir20, Co90Fe10, Ta, Cu, Al, Ru, NiFeCr, Cr, Ti, Fe, Co, CoFeB, CoZrNb, MnCrPt, Al2O3, Zr
Broad beam ion mill system to define structures through a photoresist or hard mask
Uniformity over 6” wafers, with 150mm diameter, typically around 1.5%
Reactive gases (to enhance etching rates): Ar, O2, N2, Xe
Applications
Ion beam deposition of metals and dielectrics on wafers with 150mm diameter
Structures: spin valves and tunnel junctions by oxygen plasma, read gap oxides and passivation layers
Location
Rua Alves Redol, Nº9, Clean Room Class 100
Chemical Vapour Deposition System
Electrotech Delta
Equipment
Film thickness range: 1000 Å to 1 micron (with the possibility of depositing up to 4 mm of SiO2 on bare silicon)
Film uniformity better than 6% over a 150mm diameter wafer
Substrates other than silicon are also possible upon request
Applications
Deposition of thin films of SiO2 (using silane and nitrous oxide) and SiNx (using silane, ammonia and nitrogen) for electrical insulation and passivation
Location
Rua Alves Redol, Nº9, Clean Room Class 100
Magnetron Sputtering System
Nordiko 7000
Equipment
Base pressure on process modules: 5x10-9 Torr
Base pressure on dealer: 5x10-8 Torr
Hot process (400 ºC) suitable to fill 1 micron contact \ via holes
Thickness Uniformity around 1.5% over 6” wafers
Degassing module (up to 450 ºC)
Gases: Ar, N2, O2
Holders for round wafers (3”, 4”, 6”) and glass substrates (25x25mm and 25mmx75mm)
Soft sputter etching module to clean contacts before metallization
Applications
Deposition of thin films of AlSiCu alloy and TiW(N) on 150 mm wafers
Fabrication of films of AlN by reactive sputtering with thickness up to 5mm
Location
Rua Alves Redol, Nº9, Clean Room Class 100
Magnetron Sputtering System (2)
Nordiko 2000
Equipment
Base pressure: 5x10-8 Torr
6 different targets in the same chamber: Ni80Fe20, Co80Fe20, Mn80Ir20, Ta, Cu, Al, Zr, Hf, Ru, Re, Cr, Mn, CoPt, and others
Possibility to deposit multilayer structures with precise and automatic control of film thickness
Sputters etch available
Applications
Deposition of thin films on 3” or 4” wafers with 100mm diameter
Used in spin valve, tunnel junction and GMR multilayer fabrication
Location
Rua Alves Redol, Nº9, Gray Area
Magnetron Sputtering System (3)
Aja
Equipment
4 targets
100mm diameter wafers
Location
Tagus Park, Nanophysics Lab
Deposition System (1)
Alcatel
Equipment
Base pressure: 1x10-7 Torr
Substrate maximum size: 75 mm diameter
Appplications
Deposition of sputtered SiO2 from a silica target
Metal films deposition, depending on the target composition
Fabrication of tunnel barrier
Location
Rua Alves Redol, Nº9, Gray Area
Deposition System (2)
SCM450
Equipment
100mm diameter wafers
3 targets (3inch round)
Location
Rua Alves Redol, Nº9, Gray Area
Evaporator
Edwards S150B
Applications
Applies gold coating for insulating materials prior to SEM imaging
Location
Rua Alves Redol, Nº9, PDMS room
Ellipsometer
Rudolf Auto EL IV-NIR-3
Equipment
Measures thin dielectric films such as SiO2 and SiNx on silicon
Wavelengths: 405, 633 and 830 nm
Applications
Determination of the optical constants of bare surfaces, and the refractive indices and thickness of thin films on those surfaces
Location
Rua Alves Redol, nº9, Class 100 Clean Room