Thin Films Deposition and Characterization Laboratory

Responsible: Reinhard Schwarz

Contact

Reinhard Schwarz

ext.: 3952

e-mail: rschwarz@fisica.ist.utl.pt

Rachid Ayouchi

ext.: 3775

Access Conditions

Contact the responsible

Location

Instituto Superior Técnico, Avenida Rovisco Pais 1, 1049-001 Lisboa, Physic Building, floors 3 and 5

Applications

Deposition and opto-electronic characterization of semiconducting, insulating, and ferroelectric thin films

Hybrid PLD/CVD reactor Equipment UHV reactor chamber and a pulsed Nd:YAG laser system Sources: Solid (e.g. Si, Zn, Cu) and gaseous (O, N) Laser wavelengths operation: 1064 nm, 532 nm and 266 nm Pulse energy: maximum 300 mJ Pulse duration: 5 ns CVD process powered by a 100 W RF-generator at 13.56 MHz PC-control of process parameters allows for simultaneous or sequential process protocols Reactor system with fast gas switching for attaining sharp interfaces Separate vacuum chambers are available for either semiconductor-oxide material system deposition or ferroelectric film preparation

Nitrogen Cryostat (low temperature equipment) Equipment Temperature range: 80k to 500k Steady-state excitation by HeNe (633 nm), HeCd lasers (325 nm), and Xe light sources, together with various spectrometers Pulsed laser excitation by Nd:YAG laser Application Transport and photoluminescence measurements

Microwave reflectometer

Equipment

Microwave resonator system operate at 2.45 GHz

Application

Measurement of carrier mobility and recombination lifetime

INESC

Responsible: João Pedro Conde

Contact

Tel.:: 213 100 237

Fax: 213 145 843

e-mail: geral@inesc-mn.pt

Access Conditions

Restricted access. Contact the responsible

Ion beam deposition and milling system (1)

Nordiko 3600

Equipment

Base pressure: 5x10-8 Torr

6 targets to deposit multilayer structures with precise and automatic control of film thickness

Broad beam ion mill system to define structures through a photoresist or hard mask

Applications

Ion beam deposition of metals and dielectrics on wafers with 200mm diameter

Structures: spin valves and tunnel junctions by oxygen plasma, read gap oxides and passivation layers

Location

Rua Alves Redol, Nº9, Clean Room Class 100

Ion beam deposition and milling system (2)

Nordiko 3000

Equipment

Base pressure: 5x10-8 Torr

7 targets: Ni80Fe20, Mn80Ir20, Co90Fe10, Ta, Cu, Al, Ru, NiFeCr, Cr, Ti, Fe, Co, CoFeB, CoZrNb, MnCrPt, Al2O3, Zr

Broad beam ion mill system to define structures through a photoresist or hard mask

Uniformity over 6” wafers, with 150mm diameter, typically around 1.5%

Reactive gases (to enhance etching rates): Ar, O2, N2, Xe

Applications

Ion beam deposition of metals and dielectrics on wafers with 150mm diameter

Structures: spin valves and tunnel junctions by oxygen plasma, read gap oxides and passivation layers

Location

Rua Alves Redol, Nº9, Clean Room Class 100

Chemical Vapour Deposition System

Electrotech Delta

Equipment

Film thickness range: 1000 Å to 1 micron (with the possibility of depositing up to 4 mm of SiO2 on bare silicon)

Film uniformity better than 6% over a 150mm diameter wafer

Substrates other than silicon are also possible upon request

Applications

Deposition of thin films of SiO2 (using silane and nitrous oxide) and SiNx (using silane, ammonia and nitrogen) for electrical insulation and passivation

Location

Rua Alves Redol, Nº9, Clean Room Class 100

Magnetron Sputtering System

Nordiko 7000

Equipment

Base pressure on process modules: 5x10-9 Torr

Base pressure on dealer: 5x10-8 Torr

Hot process (400 ºC) suitable to fill 1 micron contact \ via holes

Thickness Uniformity around 1.5% over 6” wafers

Degassing module (up to 450 ºC)

Gases: Ar, N2, O2

Holders for round wafers (3”, 4”, 6”) and glass substrates (25x25mm and 25mmx75mm)

Soft sputter etching module to clean contacts before metallization

Applications

Deposition of thin films of AlSiCu alloy and TiW(N) on 150 mm wafers

Fabrication of films of AlN by reactive sputtering with thickness up to 5mm

Location

Rua Alves Redol, Nº9, Clean Room Class 100

Magnetron Sputtering System (2)

Nordiko 2000

Equipment

Base pressure: 5x10-8 Torr

6 different targets in the same chamber: Ni80Fe20, Co80Fe20, Mn80Ir20, Ta, Cu, Al, Zr, Hf, Ru, Re, Cr, Mn, CoPt, and others

Possibility to deposit multilayer structures with precise and automatic control of film thickness

Sputters etch available

Applications

Deposition of thin films on 3” or 4” wafers with 100mm diameter

Used in spin valve, tunnel junction and GMR multilayer fabrication

Location

Rua Alves Redol, Nº9, Gray Area

Magnetron Sputtering System (3)

Aja

Equipment

4 targets

100mm diameter wafers

Location

Tagus Park, Nanophysics Lab

Deposition System (1)

Alcatel

Equipment

Base pressure: 1x10-7 Torr

Substrate maximum size: 75 mm diameter

Appplications

Deposition of sputtered SiO2 from a silica target

Metal films deposition, depending on the target composition

Fabrication of tunnel barrier

Location

Rua Alves Redol, Nº9, Gray Area

Deposition System (2)

SCM450

Equipment

100mm diameter wafers

3 targets (3inch round)

Location

Rua Alves Redol, Nº9, Gray Area

Evaporator

Edwards S150B

Applications

Applies gold coating for insulating materials prior to SEM imaging

Location

Rua Alves Redol, Nº9, PDMS room

Ellipsometer

Rudolf Auto EL IV-NIR-3

Equipment

Measures thin dielectric films such as SiO2 and SiNx on silicon

Wavelengths: 405, 633 and 830 nm

Applications

Determination of the optical constants of bare surfaces, and the refractive indices and thickness of thin films on those surfaces

Location

Rua Alves Redol, nº9, Class 100 Clean Room